The results of the influence of thermal and chemical treatments on the surface morphology of (110) NdGaO3 substrates are described in this paper. The treated surfaces were analysed by Atomic Force Microscopy (AFM), in air, and by in-situ high pressure Reflection High Energy Electron Diffraction (RHEED). The thermal treatment of substrates resulted in a NdO1+x single terminated surface, while a surface with GaO2-x terminating layer and atomically flat terraces without etch pits could be obtained by chemical etching in a HF + NH4F + H2O solution, followed by an annealing step at high temperatures (900-1000oC) in air or in oxygen flow, for surface recrystalization.

 

 

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